HM628128DI
HM628128DI is 1 M SRAM (128-kword X 8-bit) manufactured by Hitachi Semiconductor.
Description
The Hitachi HM628128DI Series is 1-Mbit static RAM organized 131,072-kword × 8-bit. HM628128DI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM628128DI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has package variations of standard 32-pin plastic DIP, standard 32-pin plastic SOP.
Features
- Single 5 V supply: 5 V ± 10%
- Access time: 70 ns (max)
- Power dissipation Active: 30 m W/MHz (typ) Standby: 10 µW (typ)
- pletely static memory. No clock or timing strobe required
- Equal access and cycle times
- mon data input and output Three state output
- Directly TTL patible all inputs
- Battery backup operation 2 chip selection for battery backup
- Temperature range:
- 40 to +85°C
Preliminary: The specification of this device are subject to change without notice. Please contact your nearest Hitachi’s Sales Dept. regarding specification.
HM628128DI Series
Ordering Information
Type No. HM628128DLPI-7 HM628128DLFPI-7 Access time 70 ns 70 ns Package 600-mil 32-pin plastic DIP (DP-32) 525-mil 32-pin plastic SOP (FP-32D)
HM628128DI Series
Pin Arrangement
32-pin DIP/SOP
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view)
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
VCC A15 CS2 WE A13 A8 A9 A11 OE A10 CS1 I/O7 I/O6 I/O5 I/O4 I/O3
Pin Description
Pin name A0 to A16 I/O0 to I/O7 CS1 CS2 WE OE VCC VSS NC Function Address input Data input/output Chip select 1 Chip select 2 Write enable Output enable Power supply Ground No connection
HM628128DI Series
Block Diagram
LSB A12 A7 A6 A5 A4 A3 A2 A1 A0 A10 MSB Row decoder
- -
- -
- VCC VSS
Memory matrix 512 x 2,048
I/O0 Input data control I/O7
- -
Column I/O Column decoder
- -...