HRB0103B
HRB0103B is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features
- Low forward voltage drop and suitable for high effifiency forward current.
- CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRB0103B Laser Mark E2 Package Code CMPAK
Outline
1 1 Cathode 2 Anode 3 Cathode Anode
(Top View)
Absolute Maximum Ratings (Ta = 25°C)
- 1
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Note: Note: Symbol VRRM I o- 2 Value 30 100
- 3
Unit V m A A °C °C
IFSM
Tj
3 125 -55 to +150
Tstg
1. Per one device 2. See Fig.5, Two device total 3. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Symbol VF IR Min
- - Typ
- - Max 0.44 50 Unit V µA Test Condition I F = 100 m A VR = 30V
Main Characteristic
10 -2 Pulse test 10 -3 10 10
-4 -3 -2
Pulse test
Forward current I F (A)
Reverse current I R (A)
10 10
-5
-4
-6
-5
10-7 10 -8...
