HRF302A
HRF302A is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features
- Low forward voltage drop and suitable for high effifiency rectifying.
- DO-214 is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRF302A Laser Mark 302A Package Code DO-214
Outline
Cathode mark Mark
302A
1 2
Lot No.
1. Cathode 2. Anode
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Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol V
- 1 RRM
Value 20 3
Unit V A A °C °C
I o- 1 I FSM Tj Tstg
- 2
100 125
- 40 to +125
Notes: 1. See from Fig.4 to Fig.7 2. 10msec half sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current ESD-Capability Thermal resistance Symbol VF IR
- Rth(j-a) Rth(j-c) Note: 1. Glass epoxy board Min
- - 250
- - Typ
- -
- 100 34 Max 0.40 1.0
- -
- Unit V m A V Test Condition I F = 3A VR = 20V C = 200p F , R = 0Ω , Both forward and reverse direction 1 pulse.
- 1
° C/W Glass epoxy board Tc = 25° C
Land size
3.5 6.8 2.0
Unit: mm
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