HRF502A
HRF502A is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features
- Low forward voltage drop and suitable for high effifiency rectifying.
- DO-214 is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRF502A Laser Mark 502A Package Code DO-214
Outline
Cathode mark Mark
502A
1 2
Lot No.
1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Note: Symbol V
- 1 RRM
Value 20 5
Unit V A A °C °C
I o- 1 I FSM Tj Tstg
- 2
100 125 -40 to +125
1. See from Fig.4 to Fig.7 2. 10msec half sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current ESD-Capability Thermal resistance Symbol VF IR
- Rth(j-a) Rth(j-c) Note: 1. Glass epoxy board Min
- - 250
- - Typ
- -
- 90 42 Max 0.40 1.0
- -
- Unit V m A V Test Condition I F = 5A VR = 20V C=200p F , R=0 Ω , Both forward and reverse direction 1 pulse.
- 1
°C/W Glass epoxy board Tc=25°C
Land size
3.5 6.8 2.0
Unit: mm
Main Characteristic
Pulse...
