HSS104
HSS104 is Silicon Epitaxial Planar Diode for High Speed Switching manufactured by Hitachi Semiconductor.
Features
- Short reverse recovery time and forward recovery time.
- Suitable for 5mm pitch high speed automatical insertion.
- Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. HSS104 Cathode band Blue Package Code MHD
Outline
1 Cathode band
1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR I FM I FSM
- IO Pd Tj Tstg Value 40 35 300 0.4 110 300 175
- 65 to +175 Unit V V m A A m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C t rr Min
- -
- - Typ
- -
- - Max 1.2 0.5 3.0 3.0 Unit V µA p F ns Test Condition I F = 10m A VR = 35V VR = 0.5V, f = 1MHz I F = 10m A, VR = 6V, RL = 50Ω
- 1
Forward current I F (A)
- 2
- 3
- 4
0.6 0.2 0.8 0.4 Forward voltage VF (V)
Fig.1 Forward current Vs. Forward voltage
- 6
Reverse current I R (A)
- 7
-...
