HSS81
HSS81 is Silicon Epitaxial Planar Diode for High Voltage Switching manufactured by Hitachi Semiconductor.
Features
- High reverse voltage. (VR = 150V)
- Suitable for 5mm pitch high speed automatical insertion.
- Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. HSS81 Cathode band Green Package Code MHD
Outline
1 Cathode band
1. Cathode 2. Anode
Absolute Maximum Ratings- 2 (Ta = 25°C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Symbol VRM- VR I FM I FSM
- IO Pd Tj Tstg
2 1
Value 200 150 625 1 150 400 200
- 65 to +175
Unit V V m A A m A m W °C °C
Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic. 2. Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Symbol VF I R1 I R2 Capacitance Reverse recovery time C t rr Min
- -
- -
- Typ
- -
- 1.5
- Max 1.0 0.2 100
- 100 p F ns Unit V µA Test Condition I F = 100m A VR = 150V VR = 200V VR = 0V, f = 1MHz I F = IR = 30m A, Irr = 3m A, R L = 100Ω
- 1
Forward current I F (A)
- 3
- 4
0.8 0.4 0.6 1.0 Forward voltage VF (V)
Ta = 12 Ta = 5°C 75° C Ta = 25°C Ta =
- 25° C
-...
