HTT1115S Datasheet | Hitachi Semiconductor

Features - Include 2 transistors in a small size SMD package: SMFPAK- 6(6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor 2SC5757 Outline SMFPAK-6 Pin Arrangement B1 6 Q1 E2 5 Q2 B2 4 3 Index band C1 1 1. Collector Q1 2. Emitter Q1 3. Collector Q2 E1 2 C2 3 .. Note: Marking is “EK1”. 4. Base Q2 5. Emitter Q2 6. Base Q1 Absolute Maximum Ratings (Ta = 25 °C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 150 - 55 to +150 Q1 15 4 1.5 50 Q2 10 3.5 1.5 80 Total 220- 150 - 55 to +150 Unit V V V m A m W °C °C - Value on PCB. (FR- 4(13 x 13 x 0.635 mm)) Electrical Characteristics (Q1) (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO h FE Cre f T |S21| NF Min 15    100  10 13  Typ     130  13 16 1.0 Max  0.1 1 0.2 170 0.45   2.0 Unit V µA µA µA  p F GHz d B d B Test Condition IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 4 V, RBE = infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 m A VCB = 1 V, f = 1 MHz, Emitter ground VCE = 1 V, IC = 5 m A, f = 1 GHz VCE = 1 V, IC = 5 m A, f = 900 MHz VCE = 1 V, IC = 5 m A, f = 900 MHz, ΓS = ΓL = 50 Ω .. Rev.3, Aug. 2001, page 2 of 10 Electrical Characteristics (Q2) (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO h FE Cre f T PG NF Min 10    80  4 7  Typ     100 0.8 6 12 1.5 Max  1 1 1.0 130 1.1   2.3 Unit V µA µA µA  p F...