HVB14S
HVB14S is Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator manufactured by Hitachi Semiconductor.
Features
- -
- Low forward resistance. (rf =7.0Ωmax) Low capacitance. (C=0.25p F typ) CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HVB14S Laser Mark H6 Package Code CMPAK
Outline
1 1 Cathode 2 Anode 3 Cathode Anode
(Top View)
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: Symbol VR IF Pd Tj Tstg
- 1
Value 50 50 100 125 -55Å`+125
Unit V m A m W °C °C
1. Two device total.
Electrical Characteristics (Ta = 25°C)
- 2
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Note: Note:
- 1
Symbol VF IR C rf Å
Min Å Å Å Å 200
Typ Å Å 0.25 Å Å
Max 1.0 100 Å 7 Å
Unit V n A p F Ω V
Test Condition I F = 50 m A VR = 50V VR = 50V, f = 1 MHz I F = 10 m A, f = 100 MHz C=200p F, Both forward and reverse direction 1 pulse
1. Failure criterion ; IR ≥ 200n A at VR =50 V 2. Per one device.
Main Characteristic
-1
-8
(A)
-3
-5
Reverse current I R...
