HVC358B
HVC358B is Variable Capacitance Diode for VCO manufactured by Hitachi Semiconductor.
Features
- -
- - High capacitance ratio. (n =2.20.min) Low series resistance. (rs=0.4 max) Good C-V linearity. Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HVC358B Laser Mark B2 Package Code UFP
Outline
Cathode mark Mark 1
B2
2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance n rs Min
- - 19.5 8.00 2.20
- Typ
- -
- -
- - Max 10 100 21.0 9.30
- 0.4
- Ω p F Unit n A Test Condition VR = 15V VR = 15V, Ta =60°C VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz C1 / C4 VR = 1V, f = 470 MHz
Main Characteristic
10 10
-6
30 f=1MHz
-7
(A)
Reverse current IR
10 10
-8
Capacitance C (p F)
-9
10 10
-10
-11
10...
