HVC359
HVC359 is Variable Capacitance Diode for VCXO manufactured by Hitachi Semiconductor.
Features
- High capacitance ratio and good C-V linearity.
- To be usable at low voltage.
- Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HVC359 Laser Mark S Package Code UFP
Outline
Cathode mark Mark 1
2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance ESD-Capability
- 1
Min
- - 24.8 6.0 3.0
- 80
Typ
- -
- -
- -
- Max 10 100 29.8 8.3
- 1.5
- Unit n A
Test Condition VR = 10V VR = 10V, Ta = 60 °C p F
VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz n rs Å
- Ω V
C1/C4 VR = 4V, f = 100 MHz C=200p F , Both forward and reverse direction 1 pulse.
Notes 1. Failure criterion ; IR ≥ 20n A at VR =10 V
Main Characteristic
-9
Reverse current I R (A)
-10
-11
10-12
10-13 0 4 8 12 16 Reverse voltage V R...
