Download HVC369 Datasheet PDF
Hitachi Semiconductor
HVC369
HVC369 is Variable Capacitance Diode for VCO manufactured by Hitachi Semiconductor.
Features - - - - Low capacitance and to be usable at GHz. High capacitance ratio. (n = 2.3 min) Low series resistance. (rs = 0.5Ω max) Ultra small F lat P ackage (UFP) is suitable for surface mount design. Ordering Information Type No. HVC369B Laser Mark B3 Package Code UFP Outline Cathode mark Mark 1 B3 2 1. Cathode 2. Anode HVC369B Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance n rs Min - - 4.65 1.85 2.3 - Typ - - - - - - Max 10 100 5.15 2.15 - 0.5 - Ω p F Unit n A Test Condition VR = 15V VR = 15V, Ta = 60 °C VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz C1 / C4 VR = 1V, f = 470 MHz HVC369B Main Characteristic -10 12 f=1MHz 10 Reverse current I R (A) (p F) Capacitance C -11 -12 -13 -14...