HVC376B
HVC376B is Variable Capacitance Diode for VCO manufactured by Hitachi Semiconductor.
Features
- -
- - High capacitance ratio (n=4.3min) and good C-V linearity. High Q circuit can be posed due to low series resistance. (rs=0.8Ωmax) To be usable at low voltage. Ultra small F lat P ackage (UFP) is suitable for surface mount design.
Ordering Information
Type No. HVC376B Laser Mark B9 Package Code UFP
Outline
Cathode mark Mark 1
B9
2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125
- 55 to +125 Unit V °C °C
Electrical Characteristics (Ta = 25°C)
Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance n rs Min
- - 25.0 4.8 4.3
- Typ
- -
- -
- - Max 10 100 28.5 6.8
- 0.8
- Ω p F Unit n A Test Condition VR = 10V VR = 10V, Ta = 60 °C VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz C1/ C4 VR = 1V, f = 470 MHz
Main Characteristic
10- 9
50 f = 1MHz 40
Reverse current I R (A)
10- 10
(p F)
- 11
Capacitance C
- 12
10-...