HVD359
HVD359 is Variable Capacitance Diode manufactured by Hitachi Semiconductor.
Features
- High capacitance ratio and good C-V linearity.
- To be usable at low voltage.
- Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HVD359 Laser Mark G Package Code SFP
Outline
Cathode mark Mark 1
2 1. Cathode 2. Anode
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125
- 55 to +125 Unit V °C °C
Electrical Characteristics
(Ta = 25°C)
Item Reverse current Symbol IR1 IR2 Capacitance C1 C4 Capacitance ratio Series resistance ESD-Capability
- 1
Min 24.8 6.0 3.0 80
Typ
Max 10 100 29.8 8.3 1.5
Unit n A
Test Condition VR = 10 V VR = 10 V, Ta = 60°C VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz C1/C4 VR = 4 V, f = 100 MHz C = 200 p F, R = 0 Ω, Both forward and reverse direction 1 pulse. p F Ω V n rs
Notes: 1. Failure criterion ; IR ≥ 20 n A at VR =10 V 2. Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.0, Jul. 2000, page 2 of 5
Main Characteristic
-9
Reverse current I R (A)
-10
-11
10-12
10-13 0 4 8 12 16 Reverse voltage V R (V)
Fig.1 Reverse current Vs. Reverse voltage 60 f=1MHz 50
Capacitance C (p...
