HVD369B
HVD369B is Variable Capacitance Diode manufactured by Hitachi Semiconductor.
Features
- Low capacitance and to be usable at GHz.
- High capacitance ratio. (n = 2.3 min)
- Low series resistance. (rs = 0.5 Ω max)
- Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HVD369B Laser Mark D Package Code SFP
Outline
Cathode mark Mark 1
2 1. Cathode 2. Anode
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125
- 55 to +125 Unit V °C °C
Electrical Characteristics
(Ta = 25°C)
Item Reverse current Symbol IR1 IR2 Capacitance C1 C4 Capacitance ratio Series resistance n rs Min 4.65 1.85 2.3 Typ Max 10 100 5.15 2.15 0.5 Ω p F Unit n A Test Condition VR = 15 V VR = 15 V, Ta = 60°C VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz C1/ C4 VR = 1 V, f = 470 MHz
Note: Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.0, Jun. 2000, page 2 of 5
Main Characteristic
-10
12 f=1MHz 10
Reverse current I R (A)
(p F) Capacitance C
-11
-12
-13
-14...
