• Part: HVU350B
  • Description: Variable Capacitance Diode for VCO
  • Category: Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 26.97 KB
Download HVU350B Datasheet PDF
Hitachi Semiconductor
HVU350B
HVU350B is Variable Capacitance Diode for VCO manufactured by Hitachi Semiconductor.
Features - - - - High capacitance ratio. (n =2.8 min) Low series resistance. (rs=0.5Ωmax). Good C-V linearity. Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HVU350B Laser Mark B0 Package Code URP Outline Cathode mark Mark 1 B0 2 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance n rs Min - - 15.5 5.0 2.8 - Typ - - - - - - Max 10 100 17.0 6.0 - 0.5 - Ω p F Unit n A Test Condition VR = 15V VR = 15V, Ta = 60 °C VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz C1/ C4 VR = 1V, f = 470 MHz Main Characteristic 10-6 10 -7 30 f=1MHz 25 Reverse current I R (A) 10 10 10 10 Capacitance C (p F) 4 8 12 16 20 -8 -9 -10 -11 10...