HVU359 Datasheet | Hitachi Semiconductor

Features - High capacitance ratio and good C-V linearity. - To be usable at low voltage. - Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HVU359 Laser Mark S Package Code URP Outline Cathode mark Mark 1 2 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance ESD-Capability - 1 Min - - 24.8 6.0 3.0 - 80 Typ - - - - - - - Max 10 100 29.8 8.3 - 1.5 - Unit n A Test Condition VR = 10V VR = 10V, Ta = 60 °C p F VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz n rs - - Ω V C1/ C4 VR = 4V, f = 100 MHz C=200p F , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 20n A at VR =10 V Main Characteristic -9 Reverse current I R (A) -10 -11 10-12 10-13 0 4 8 12 16 Reverse voltage V R...