J117 Datasheet | Hitachi Semiconductor

Features - - - - High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB 3 1. Gate 2. Drain (Flange) 3. Source 2SJ117 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. Value at TC = 25°C .. Symbol VDSS VGSS ID I D(pulse) I DR Pch- Tch Tstg Ratings - 400 ±20 - 2 - 4 - 2 40 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS I GSS - 400 - - - 2.0 - Typ - - - - 5 Max - ±1 - 1 - 5.0 7 Unit V µA m A V Test conditions I D = - 10 m A, VGS = 0 VGS = ±20 V, VDS = 0 VDS = - 320 V, VGS = 0 I D = - 1 m A, VDS = - 10 V I D = - 1 A, VGS = - 15 V- 1 S p F p F p F ns ns ns ns V ns I F = - 1 A, VGS = 0 I F...