K2008
K2008 is Silicon N-Channel MOS FET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance
- High speed switching
- Low drive current
- No Secondary Breakdown
- Suitable for Switching regulator, DC
- DC converter, Motor Control
Outline
TO-3PFM
D G1
2 3 1. Gate 2. Drain 3. Source
2SK2008
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Symbol VDSS VGSS ID I
- 1
D(pulse)
I DR Pch- 2 Tch Tstg
Ratings 250 ±30 20 80 20 60 150
- 55 to +150
Unit V V A A A W °C °C
2SK2008
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage
V(BR)DSS
Gate to source breakdown voltage
V(BR)GSS
±30
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on) resistance
- - 2.0
- Forward transfer admittance...
