K2220 Datasheet | Hitachi Semiconductor

Features - High power gain - Excellent frequency response - High speed switching - Wide area of safe operation - Enhancement-mode - Good plementary characteristics - Equipped with gate protection diodes Outline TO-3P D G1 2 3 1. Gate 2. Source (Flange) S 3. Drain 2SK2220, 2SK2221 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. Value at Tc = 25 °C Symbol VDSX VGSS ID I DR Pch- 1 Tch Tstg Ratings 180 200 ±20 8 8 100 150 - 55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source 2SK2220 breakdown voltage 2SK2221 Gate to source breakdown voltage Gate to source cutoff voltage Symbol...