HMC-ALH382 Datasheet | Hittite Microwave Corporation

.. v01.0108 Ga As HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz Features Noise Figure: 3.8 d B P1d B: +12 d Bm Gain: 21 d B Supply Voltage: +2.5V 50 Ohm Matched Input/Output Die Size: 1.55 x 0.73 x 0.1 mm LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH382 is ideal for: - Short Haul / High Capacity Links - Wireless LANs - Military & Space Functional Diagram General Description The HMC-ALH382 is a high dynamic range, four stage Ga As HEMT MMIC Low Noise Amplifier (LNA) which operates between 57 and 65 GHz. The HMC-ALH382 Features 21 d B of small signal gain, 4 d B of noise figure and an output power of +12 d Bm at 1d B pression from a +2.5V supply voltage. All bond pads and the die backside are Ti/ Au metallized and the amplifier device is fully passivated for reliable operation. This versatile LNA is patible with conventional die attach methods, as well as thermopression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd = 2.5V, Idd = 64 m A- Parameter Frequency Range Gain Noise Figure Input Return Loss Output Return Loss Output Power for 1 d B pression (P1d B) Supply Current (Idd)(Vdd= 2.5V,Vgg= -0.3V Typ.) - Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Idd total = 64 m A 19 Min. Typ. 57 - 65 21 4 12 10 12 64 100 5.5 Max. Units GHz d B d B d B d B d Bm m A - 174 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at .hittite. .. v01.0108 Ga As HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz Linear Gain vs. Frequency 30 25 20 GAIN (d B) 15 10 5 0 57 59 61 FREQUENCY (GHz) 63 65 Noise Figure vs. Frequency 6 5 NOISE FIGURE...