HMC610LP4E Datasheet | Hittite Microwave Corporation

HMC610LP4 / 610LP4E v02.0607 70 d B RMS POWER DETECTOR, DC - 3.9 GHz Typical Applications The HMC610LP4(E) is ideal for: - Cellular / PCS / 3G - Wi MAX, Wi Bro, Fixed Wireless, & Military - RF & Microwave Instrumentation .. Features Accurate RMS-to-DC Conversion: DC to 3.9 GHz[1] Input Dynamic Range of >70 d B: -60 to +10 d Bm in 50 Ohms Waveform & Modulation Independent: GSM / CDMA / TDMA Linear-in-d B Output: Scaled 37 m V/d B Operates from 4.5 to 5.5V from -40°C to +85°C Power-Down Mode pact 4x4mm Leadless SMT Package - Power Amplifier Linearization / Control Loops - Transmitter Power Control - Transmitter Signal Strength Indication POWER DETECTORS - SMT Functional Diagram General Description The HMC610LP4(E) is a true RMS power detector capable of providing a ±1 d B measurement dynamic range of more than 70 d B. It converts any RF input signal at its differential input, regardless of modulation or waveform plexity, to an accurately scaled linearin-d B output response that is equivalent to the Root Mean-Square (RMS) of the input waveform. For normal operation, the RMSOUT pin is shorted to the VSET input, and will provide a nominal logarithmic slope of 37 m V/d B and an intercept of -70 d Bm for frequencies up to 2 GHz; other slopes are achieved with external resistors connected between RMSOUT and VSET pins. Temperature stability is excellent with ±0.5 d B error from -40°C to 85°C maintained from 100 MHz to 3.9 GHz. Electrical Specifications, TA = +25C, Vcc= 5V, Zo= 50Ω [2] Parameter Input Frequency Dynamic Range ± 1d B linearity, CW Input Deviation vs. Temperature Deviation from output @ 25°C, -45°C < TA < 85°C; Pin = -50d Bm Deviation from output @ 25°C, -45°C < TA < 85°C; Pin = -20d Bm Deviation from output @ 25°C, -45°C < TA < 85°C; Pin = 5d Bm [1] Low frequency operation determined by external ponents [2] Differential Input Drive Via 1:1 Balun Transformer, VTGT Connected to VREF, RMSOUT Connected to VSET, Unless Otherwise Noted. -0.9 0.5...