• Part: HMC758LP3E
  • Description: GaAs SMT PHEMT LOW NOISE AMPLIFIER
  • Manufacturer: Hittite Microwave Corporation
  • Size: 434.23 KB
Download HMC758LP3E Datasheet PDF
Hittite Microwave Corporation
HMC758LP3E
Features Noise Figure: 1.7 d B Gain: 22 d B Output IP3: +37 d Bm Single Supply: +3V to +5V 50 Ohm Matched Input/Output 16 Lead 3x3 mm SMT Package: 9 mm2 LOW NOISE AMPLIFIERS - SMT Typical Applications The HMC758LP3(E) is ideal for: - Cellular Infrastructure, Wi MAX & LTE/4G - Software Defined Radios - Repeaters and Femtocells - Access Points - Test & Measurement Equipment Functional Diagram General Description The HMC758LP3(E) is a Ga As PHEMT MMIC Low Noise Amplifier that is ideal for Cellular Infrastructure, Wi MAX & LTE/4G basestation front-end receivers operating between 700 and 2200 MHz. The amplifier has been optimized to provide 1.7 d B noise figure, 21 d B gain and +37 d Bm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling ponents. The HMC758LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current, which allows the designer to tailor the linearity performance of...