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HMC324MS8G - HBT DUAL DRIVER AMPLIFIER

General Description

The HMC324MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that contains two un-connected amplifiers in parallel inside an 8 lead MSOPG package.

Key Features

  • P1dB Output Power: + 16 dBm General.

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Datasheet Details

Part number HMC324MS8G
Manufacturer Hittite Microwave
File Size 197.00 KB
Description HBT DUAL DRIVER AMPLIFIER
Datasheet download datasheet HMC324MS8G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MICROWAVE CORPORATION HMC324MS8G V00.1200 HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz FEBRUARY 2001 Features P1dB Output Power: + 16 dBm General Description The HMC324MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifier that contains two un-connected amplifiers in parallel inside an 8 lead MSOPG package. When used in conjunction with an external balun, the outputs of the amplifier can be combined to reduce the 2nd harmonic distortion that is generated by the amplifier. With Vcc at +7.5V, the HMC324MS8G offers 13 dB of gain and with power combining and harmonic cancellation, +22 dBm of output power can be achieved.