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HMC659 - GaAs PHEMT MMIC POWER AMPLIFIER

General Description

The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz.

The amplifier provides 19 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while requiring 300 mA from a +8V supply.

Key Features

  • P1dB Output Power: +26.5 dBm Gain: 19 dB Output IP3: +35 dBm Supply Voltage: +8V @ 300 mA 50 Ohm Matched Input/Output Die Size: 3.115 x 1.630 x 0.1 mm.
  • Test Instrumentation www. DataSheet4U. com.
  • Fiber Optics Functional Diagram General.

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Datasheet Details

Part number HMC659
Manufacturer Hittite Microwave
File Size 355.92 KB
Description GaAs PHEMT MMIC POWER AMPLIFIER
Datasheet download datasheet HMC659 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HMC659 v00.0807 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz 3 LINEAR & POWER AMPLIFIERS - CHIP Typical Applications The HMC659 is ideal for: • Telecom Infrastructure • Microwave Radio & VSAT • Military & Space Features P1dB Output Power: +26.5 dBm Gain: 19 dB Output IP3: +35 dBm Supply Voltage: +8V @ 300 mA 50 Ohm Matched Input/Output Die Size: 3.115 x 1.630 x 0.1 mm • Test Instrumentation www.DataSheet4U.com • Fiber Optics Functional Diagram General Description The HMC659 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +26.5 dBm of output power at 1 dB gain compression while requiring 300 mA from a +8V supply. Gain flatness is excellent at ±0.