HMC358MS8GE Overview
The HMC358MS8G & HMC358MS8GE are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC358MS8G & HMC358MS8GE integrate resonators, negative resistance devices, varactor diodes, and buffer amplifiers. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure.
HMC358MS8GE Applications
- UNII & Pt. to Pt. Radios