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HMC999 Datasheet Gan Mmic 10 Watt Power Amplifier

Manufacturer: Hittite

Overview: HMC999 v01.0112 GaN MMIC 10 WATT POWER AMPLIFIER, 0.01 - 10 GHz Typical Applications The HMC999 is ideal.

Datasheet Details

Part number HMC999
Manufacturer Hittite
File Size 680.72 KB
Description GaN MMIC 10 WATT POWER AMPLIFIER
Datasheet HMC999_Hittite.pdf

General Description

The HMC999 is a GaN HEMT MMIC Distributed Power Amplifier which operates between 0.01 and 10 GHz.

The amplifier provides 11 dB of gain, 47 dBm output IP3 and 38 dBm of output power at 1 dB gain pression while requiring 1100 mA from a +48 V supply.

The HMC999 amplifier provides 10 Watts of saturated power in a chip area only 7 mm2, equating to a power density of 1.5 W/mm2 over 3 decades of bandwidth.

Key Features

  • High P1dB Output Power: 38 dBm High Psat Output Power: 40 dBm High Output IP3: 47 dBm High Gain: 11 dB Supply Voltage: +28V, +40V or +48V @ 1100 mA 50 Ohm Matched Input/Output Die Size: 3.66 x 1.91 x 0.1 mm Amplifiers - Linear & Power - Chip.
  • Test Instrumentation.
  • Military Communications.
  • Jammers and Decoys.
  • Radar, EW & ECM Subsystems.
  • Space Functional Diagram General.

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