The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality.
It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in low voltage systems operating in radiation environments.
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Military & Space Products
HLX6228
128K x 8 STATIC RAM—Low Power SOI
FEATURES
RADIATION • Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.7 µm Low Power Process (Leff = 0.55 µm) • Total Dose Hardness through 1x106 rad(Si) • Neutron Hardness through 1x1014 cm-2 • Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s • Dose Rate Survivability through 1x1011 rad(Si)/s • Soft Error Rate of <1x10-10 Upsets/bit-day in Geosynchronous Orbit • No Latchup OTHER • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Typical Operating Power <9 mW/MHz • JEDEC Standard Low Voltage CMOS Compatible I/O • Single 3.3 V ± 0.3 V Power Supply • Asynchronous Operation • Packaging Options – 32-Lead CFP (0.820 in. x 0.600 in.) – 40-Lead CFP (0.775 in. x 0.710 in.
HLX6228 Datasheet
