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HR2000 - Ricmos Gate Arrays

General Description

The HR2000 gate arrays are performance oriented seaof-transistor arrays, fabricated on Honeywell’s 0.65 µm RICMOS™ IV bulk CMOS process.

Key Features

  • Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process.
  • Array Sizes from 10K to 336K Available Gates (Raw).
  • TTL or CMOS Compatible I/O.
  • Full Complement of Screening Flows www. DataSheet4U. com HR2000 FAMILY.
  • Total Dose Hardness ≥1x106 rad(SiO2).
  • Dose Rate Upset Hardness ≥1x109 rad(Si)/sec.
  • Dose Rate Survivability ≥1x1012 rad (Si)/sec.
  • Soft Error Rate ≤1x10-10 Errors/Bit/Day.
  • Neutron Fluenc.

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Datasheet Details

Part number HR2000
Manufacturer Honeywell
File Size 48.47 KB
Description Ricmos Gate Arrays
Datasheet download datasheet HR2000 Datasheet

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RICMOS™ GATE ARRAYS FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process • Array Sizes from 10K to 336K Available Gates (Raw) • TTL or CMOS Compatible I/O • Full Complement of Screening Flows www.DataSheet4U.com HR2000 FAMILY • Total Dose Hardness ≥1x106 rad(SiO2) • Dose Rate Upset Hardness ≥1x109 rad(Si)/sec • Dose Rate Survivability ≥1x1012 rad (Si)/sec • Soft Error Rate ≤1x10-10 Errors/Bit/Day • Neutron Fluence Hardness to 1x1014/cm2 • No Latchup • Configurable Multi-Port Gate Array SRAM • Modular Custom Drop-In SRAM Capability • Supports 5V Operation • Supports System Speeds Beyond 75 MHz GENERAL DESCRIPTION The HR2000 gate arrays are performance oriented seaof-transistor arrays, fabricated on Honeywell’s 0.65 µm RICMOS™ IV bulk CMOS process.