HR2000 Overview
The HR2000 gate arrays are performance oriented seaof-transistor arrays, fabricated on Honeywell’s 0.65 µm RICMOS™ IV bulk CMOS process. The high density and performance characteristics of the RICMOS (Radiation Insensitive CMOS) process make possible device operation beyond 75 MHz over the full military temperature range, even after exposure to ionizing radiation exceeding 1x106 rad(SiO2). Flip-Flops have been...
HR2000 Key Features
- Fabricated on Honeywell’s Radiation Hardened 0.65 µmLeff RICMOS™ IV Bulk Process
- Array Sizes from 10K to 336K Available Gates (Raw)
- TTL or CMOS patible I/O
- Full plement of Screening Flows
- Total Dose Hardness ≥1x106 rad(SiO2)
- Dose Rate Upset Hardness ≥1x109 rad(Si)/sec
- Dose Rate Survivability ≥1x1012 rad (Si)/sec
- Soft Error Rate ≤1x10-10 Errors/Bit/Day
- Neutron Fluence Hardness to 1x1014/cm2
- No Latchup