Datasheet4U Logo Datasheet4U.com

SE5470 - AlGaAs Infrared Emitting Diode

General Description

The SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a TO-46 metal can package.

The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 series has glass lensed cans providing a narrow beam angle.

Key Features

  • TO-46 metal can package.
  • Choice of flat window or lensed package.
  • 90¡ or 20¡ (nominal) beam angle option.
  • 880 nm wavelength.
  • Higher output power than GaAs at equivalent drive currents.
  • Wide operating temperature range (- 55¡C to +125¡C).
  • Ideal for high pulsed current.

📥 Download Datasheet

Datasheet Details

Part number SE5470
Manufacturer Honeywell
File Size 380.20 KB
Description AlGaAs Infrared Emitting Diode
Datasheet download datasheet SE5470 Datasheet

Full PDF Text Transcription for SE5470 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SE5470. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 20¡ (nominal) beam an...

View more extracted text
Choice of flat window or lensed package • 90¡ or 20¡ (nominal) beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (- 55¡C to +125¡C) • Ideal for high pulsed current applications • Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger DESCRIPTION The SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a TO-46 metal can package.