Hope Microelectronics MAQ3078
N-CHANNEL MOS TYPE
| Part No. | MAQ3078 |
|---|---|
| Datasheet | MAQ3078 Download |
| Manufacturer | Hope Microelectronics |
| Description | N-CHANNEL MOS TYPE |
| Buy | Stock & Price |
APPLICATIONS
(GSM) Output Power Gain Drain Efficiency : PO = 27.0 dBmW (Min.) : GP = 12.5 dB (Min.) : ηD = 46% (Typ.) Unit: mmMAXIMUM RATINGS
(Ta = 25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDSS VGSS ID PD* Tch Tstg RATING 10 5 0.5 3.0 150 −45~150 UNIT V V A W °C °C *: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB SOT-89 MARKING Tel:+86-755-82973805 Fax:+86-755-82973550 2 E-mail: sales@hoperf.com MAQ3078ELECTRICAL CHARACTERISTICS
(Ta = 25°C) CHARACTERISTIC Output Power Drain Efficiency Power Gain Threshold Voltage Drain Cut-off Current Gate-Source Leakage Current SYMBOL PO ηD GP Vth IDSS IGSS The item can replace 2SK3078 TEST CONDITION VDS = 4.8 V Iidle = 108 mA (VGS = adjust) f = 915 MHz, Pi = 14.5 dBmW ZG = ZL = 50 Ω VDS = 4.8 V, ID = 0.5 mA VDS = 10 V, VGS = 0 V VGS = 5 V, VDS = 0 V MIN 27.0 ― 12.5 0.20 ― ― TYP. ― 46.0 ― ― ― ― MAX ― ― ― 1.20 10 5 UNIT dBmW % dB V µA µA CAUTION This transistor is the electrostatic sensitive device.
