| Part number | HXY5N10MI |
|---|---|
| Datasheet | HXY5N10MI-HuaXuanYang.pdf |
| File Size | 3.07 MB |
| Manufacturer | HuaXuanYang |
| Description | N-Channel Enhancement Mode MOSFET |
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The HXY5N10MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
See all HuaXuanYang datasheets
| Part Number | Description |
|---|---|
| HXY3134CI | N-Channel Enhancement Mode MOSFET |
