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HXY5N10MI - N-Channel Enhancement Mode MOSFET

General Description

The HXY5N10MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 100V ID = 5A RDS(ON) < 98 mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V.

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Datasheet Details

Part number HXY5N10MI
Manufacturer HuaXuanYang
File Size 3.07 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HXY5N10MI Datasheet

Full PDF Text Transcription for HXY5N10MI (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HXY5N10MI. For precise diagrams, and layout, please refer to the original PDF.

HUAXUANYANG HXY ELECTRONICS CO.,LTD HXY5N10MI N-Channel Enhancement Mode MOSFET Description The HXY5N10MI uses advanced trench technology to provide excellent RDS(ON), lo...

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N10MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 98 mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.

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