CS12N65FA9H Datasheet (Huajin Discrete Devices)

Part CS12N65FA9H
Description Silicon N-Channel Power MOSFET
Category MOSFET
Manufacturer Huajin Discrete Devices
Size 222.35 KB
Huajin Discrete Devices

CS12N65FA9H Overview

Description

: CS12N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.