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Silicon N-Channel Power MOSFET
○R
CS12N65F A9H
General Description：
CS12N65F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form
is TO-220F, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.7Ω) l Low Gate Charge (Typical Data:44nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS12N65FA9H Datasheet
