CS7N60FA9HD Datasheet | Huajing Discrete Devices

Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R General Description： CS7N60FA9HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the Ro HS standard. Features ： z Fast Switching z ESD Improved Capability z Low Gate Charge (Typical Data:21n C) z Low Reverse transfer capacitances(Typical:15p F) z 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Energy ,Repetitive Avalanche Current Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C VESD(G-S) TJ，Tstg TL Gate source ESD (HBM-C= 100p F, R=1.5kΩ) Operating Junction and Storage Temperature Range Maximum Temperature for Soldering VDSS ID PD(TC=25℃) RDS(ON) 600 7 30 Rating 600 7 4.5 28 ±20 550 54 10.4 5.0 100 0.80 150，- 55 to 150 300 V A W Ω Units V A A A V m J m J A V/ns W W/℃ ℃ ℃ WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10...