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3DD13005G8D - Silicon NPN triple diffusion type bipolar transistor

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Part number 3DD13005G8D
Manufacturer Huajing Microelectronics
File Size 157.69 KB
Description Silicon NPN triple diffusion type bipolar transistor
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NPN 3DD13005G8D ○R 3DD13005G8D NPN ， ， ， ， 、。 ● ● ● ● ● ● ● ● VCEO IC Ptot（TC=25℃） 400 4 75 V A W TO-220AB -10℃～40℃ 1 265℃ ＜85％ C B ，Ta= 25℃ - - - （tp＜5ms） （tp＜5ms） Ta=25℃ Tc=25℃ RθJC RθJA E VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg 700 400 9 4 8 2 4 2 75 150 -55～150 V V V A A A A W ℃ ℃ 2012 1.7 62.5 ℃/W ℃/W 1/4 3DD13005G8D ○R ，Ta= 25℃ - ICBO VCB=700V, IE=0 - ICEO VCE=400V, IB=0 - IEBO VEB=9V, IC=0 - VCBO IC=0.1mA - VCEO IC=1mA - VEBO IE=0.1mA hFE* VCE=5V, IC=1A hFE1 hFE2 - hFE1/ hFE2 VCE * sat hFE1:VCE=5V, IC=50mA hFE2:VCE=5V, IC=1A IC=2A, IB=0.5A - VBE * sat IC=2A, IB=0.5A Vf* If = 2 A ts tr UI9600，IC=0.5A tf fT VCE=10V, IC=0.
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