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3DD6012A6 - Silicon NPN bipolar transistor low-frequency amplification

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Part number 3DD6012A6
Manufacturer Huajing Microelectronics
File Size 193.88 KB
Description Silicon NPN bipolar transistor low-frequency amplification
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NPN ○R 3DD6012A6 1 : 3DD6012A6 NPN ,, ,、 VCEO 。 :TO-126, RoHS 。 IC Ptot(TC=25℃) 2 : TO-126 530 1.2 50 ● ● ● ● ● 1 2 3 1. B 2. C 3. E 3 : 、, 。 B C V A W E () (Pb) (Hg) (Cd) (Cr(VI)) (PBB) (PBDE) ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% ○○○○○ ○ ○○○○○ ○ ○○○○○ ○ ○○○○○ ○ ×○○○○ ○ ○: SJ/T11363-2006 。 ×: SJ/T11363-2006 。 (Pb), RoHS 。 1 5 2008 4 ,Ta= 25℃ - - - Ta=25℃ Tc=25℃ VCBO VCEO VEBO IC Ptot Tj Tstg ○R 3DD6012A6 900 530 9 1.2 1.5 50 150 -55~150 V V V A W ℃ ℃ ,Ta= 25℃ - - - - - - hFE1 hFE2 - - ICBO ICEO IEBO VCBO VCEO VEBO hFEa hFE1/ hFE2 VCE a sat VBE a sat ts tr tf fT a: tp≤300μs,δ≤2% VCB=900V, IE=0 VCE=530V, IB=B 0 VEB=9V, IC=0 IC=0.1mA IC=1.0mA IE=0.