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Silicon N-Channel Power MOSFET 8PA60N06 AA-G
○R
General Description：
8PA60N06 AA-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is SOP8,
which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free
Applications：
Power switch circuit of adaptor and charger.
8PA60N06AA-G Datasheet
