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BT25T120CKR - Silicon FS Trench IGBT

General Description

Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integrated with Free Wheeling Diode, the 1200V Trench FS IGBT offers superior conduction and switching performances, high avalanche ruggedness.

Key Features

  • l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ =1.95V @ IC =25A and TC = 25°C l Extremely enhanced avalanche capability.

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Datasheet Details

Part number BT25T120CKR
Manufacturer Huajing Microelectronics
File Size 250.20 KB
Description Silicon FS Trench IGBT
Datasheet download datasheet BT25T120CKR Datasheet

Full PDF Text Transcription for BT25T120CKR (Reference)

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Silicon FS Trench IGBT BT25T120 CKR ○R General Description： Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integrated with Free Wheelin...

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n, advanced FS(field stop) technology and integrated with Free Wheeling Diode, the 1200V Trench FS IGBT offers superior conduction and switching performances, high avalanche ruggedness. VCES IC Ptot (TC=25℃) VCE(SAT) 1200 V 25 A 312 W 1.95 V Features： l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ =1.95V @ IC =25A and TC = 25°C l Extremely enhanced avalanche capability Applications： Power switch circuit of induction cooker(IH).

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