BT25T120CKR - Silicon FS Trench IGBT

Datasheet Summary

Description

Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integrated with Free Wheeling Diode, the 1200V Trench FS IGBT offers superior conduction and switching performances, high avalanche ruggedness.

Features

l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ =1.95V @ IC =25A and TC = 25°C l Extremely enhanced avalanche capability.

Huajing Microelectronics

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Datasheet Details

Part number	BT25T120CKR
Manufacturer	Huajing Microelectronics
File Size	250.20 KB
Description	Silicon FS Trench IGBT
Datasheet	BT25T120CKR Datasheet
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Silicon FS Trench IGBT BT25T120 CKR ○R General Description： Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integrated with Free Wheeling Diode, the 1200V Trench FS IGBT offers superior conduction and switching performances, high avalanche ruggedness. VCES IC Ptot (TC=25℃) VCE(SAT) 1200 V 25 A 312 W 1.95 V Features： l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ =1.95V @ IC =25A and TC = 25°C l Extremely enhanced avalanche capability Applications： Power switch circuit of induction cooker(IH).

Published: Mar 22, 2018 |