BT30N60ANF - Silicon FS Planar IGBT

Datasheet Summary

Description

Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 30A and TC = 25°C l Extremely enhanced avalanche capability.

Huajing Microelectronics

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Datasheet Details

Part number	BT30N60ANF
Manufacturer	Huajing Microelectronics
File Size	104.65 KB
Description	Silicon FS Planar IGBT
Datasheet	BT30N60ANF Datasheet
Additional preview pages of the BT30N60ANF datasheet.

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Full PDF Text Transcription

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Silicon FS Planar IGBT BT30N60ANF ○R General Description： Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. VCES IC Ptot （TC=25℃） VCE(SAT) 600 30 312 2.0 V A W V Features： l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.

Published: Dec 6, 2016 |