Datasheet4U Logo Datasheet4U.com

BT40N60BNF - Silicon FS Planar IGBT

Description

Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

  • l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.2V @ IC = 40A and TC = 25°C l Extremely enhanced avalanche capability.

📥 Download Datasheet

Datasheet Details

Part number BT40N60BNF
Manufacturer Huajing Microelectronics
File Size 105.84 KB
Description Silicon FS Planar IGBT
Datasheet download datasheet BT40N60BNF Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BT401 DC/DC Converters ETC
BT402 DC/DC Converters ETC
BT403 DC/DC Converters ETC
BT404 DC/DC Converters ETC
BT405 DC/DC Converters ETC

Other Datasheets by Huajing Microelectronics

Part Number Description
BT40T60AKF Insulated gate bipolar transistor
BT40T60ANF Insulated gate bipolar transistor
BT40T60ANFD Insulated gate bipolar transistor
BT40T60ANFU Silicon FS Trench IGBT

Full PDF Text Transcription

Click to expand full text
Silicon FS Planar IGBT BT40N60BNF ○R General Description： Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. VCES IC Ptot （TC=25℃） VCE(SAT) 600 40 312 2.2 V A W V Features： l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.
Published: |