BT40T60ANFU - Silicon FS Trench IGBT

Huajing Microelectronics

General Description

technology, offering superior conduction and switching performances.

Key Features

l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ= 1.9V @ IC = 40A and TC = 25°C l RoHS Compliant.

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BT40T60ANFU silicon fs trench igbt by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	BT40T60ANFU
Manufacturer	Huajing Microelectronics
File Size	1.40 MB
Description	Silicon FS Trench IGBT
Datasheet	BT40T60ANFU Datasheet

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Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) IC 40 A technology, offering superior conduction and switching performances. Ptot （TC=25℃） 280 W VCE(sat) 1.9 V Features： l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ= 1.