BT50N60ANF - Silicon FS Planar IGBT

Huajing Microelectronics

General Description

Using HUAJING's proprietary Trench design and advanced FS technology, the 600V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Key Features

l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.7V @ IC =50A and TC = 25°C l Extremely enhanced avalanche capability.

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BT50N60ANF silicon fs planar igbt by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	BT50N60ANF
Manufacturer	Huajing Microelectronics
File Size	106.23 KB
Description	Silicon FS Planar IGBT
Datasheet	BT50N60ANF Datasheet

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Silicon FS Planar IGBT BT50N60ANF ○R General Description： Using HUAJING's proprietary Trench design and advanced FS technology, the 600V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. VCES IC Ptot TC=25℃） VCE(SAT) 600 50 312 1.7 V A W V Features： l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.