Datasheet Summary
Silicon FS Planar IGBT
○R
General Description：
Using HUAJING's proprietary Trench design and advanced FS technology, the 600V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
VCES IC Ptot TC=25℃）
VCE(SAT)
600 50 312 1.7
Features
： l FS Trench Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 1.7V
@ IC =50A and TC = 25°C l Extremely enhanced avalanche capability
Applications：
Aircondition、Welding、UPS…...