CS10N70A8D - Silicon N-Channel Power MOSFET

Huajing Microelectronics

General Description

switching performance and enhance the avalanche energy.

Key Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:39nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test.

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CS10N70A8D silicon n-channel power mosfet by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	CS10N70A8D
Manufacturer	Huajing Microelectronics
File Size	349.96 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS10N70A8D Datasheet

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Silicon N-Channel Power MOSFET CS10N70 A8D ○R General Description： CS10N70 A8HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:39nC) l Low Reverse transfer capacitances(Typical:16pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.