Datasheet Details
| Part number | CS10N80FA9D |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 546.41 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
 CS10N80FA9D Datasheet
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| Part number | CS10N80FA9D |
|---|---|
| Manufacturer | Huajing Microelectronics |
| File Size | 546.41 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet |
CS10N80FA9D Datasheet
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CS10N80F A9D, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 800 10 60 0.72 performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.
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