CS14N10A3 datasheet by Huajing Microelectronics.
| Part number | CS14N10A3 |
|---|---|
| Datasheet | CS14N10A3-HuajingMicroelectronics.pdf |
| File Size | 456.18 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
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： CS14N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-251, which accords with the RoHS standard.
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