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CS15N50FA9R - Silicon N-Channel Power MOSFET

General Description

enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤0.4Ω) l Low Gate Charge (Typical Data:50nC) l Low Reverse transfer capacitances(Typical:25.5pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS15N50FA9R
Manufacturer Huajing Microelectronics
File Size 231.18 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS15N50FA9R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET CS15N50F A9R ○R General Description： CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and VDSS ID PD(TC=25℃) RDS(ON)Typ 500 15 70 0.3 enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤0.4Ω) l Low Gate Charge (Typical Data:50nC) l Low Reverse transfer capacitances(Typical:25.5pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier.