CS15N50FA9R Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET CS15N50F A9R ○R General Description： CS15N50F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and VDSS ID PD(TC=25℃) RDS(ON)Typ 500 15 70 0.3 enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤0.4Ω) l Low Gate Charge (Typical Data:50nC) l Low Reverse transfer capacitances(Typical:25.5pF) l 100% Single Pulse avalanche energy...