Datasheet Summary
Silicon N-Channel Power MOSFET
CS1N50 A1
○R
General Description：
VDSS
500 V
CS1N50 A1, the silicon N-channel Enhanced ID
1.0 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W which reduce the conduction loss, improve switching
RDS(ON)Typ
9.5 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accords with the RoHS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤11Ω) l Low Gate Charge (Typical Data:4nC) l Low Reverse transfer capacitances(Typical:2.2pF) l 100% Single Pulse avalanche energy...
