Click to expand full text
Silicon N-Channel Power MOSFET
CS20N50 A8H
○R
General Description：
CS20N50 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD (TC=25℃) RDS(ON)Typ
500 20 230 0.25
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard..
Features：
l Fast Switching l Low ON Resistance(Rdson≤0.3Ω) l Low Gate Charge (Typical Data:63nC) l Low Reverse transfer capacitances(Typical:25pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of electron ballast and adaptor.
CS20N50A8H Datasheet
