CS3205B8 Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET ○R CS3205 B8 General Description： VDSS CS3205 B8, the silicon N-channel Enhanced ID（Silicon limited current） VDMOSFETs, is obtained by the self-aligned planar PD(TC=25℃) 230 W Technology which reduce the conduction loss, improve RDS(ON)Typ 7.6 mΩ switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤8.5mΩ) l Low Gate Charge (Typical Data:74nC) l Low Reverse transfer capacitances(Typical:68pF) l...