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CS3205B8 - Silicon N-Channel Power MOSFET

General Description

energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤8.5mΩ) l Low Gate Charge (Typical Data:74nC) l Low Reverse transfer capacitances(Typical:68pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS3205B8
Manufacturer Huajing Microelectronics
File Size 427.95 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS3205B8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon N-Channel Power MOSFET ○R CS3205 B8 General Description： VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID（Silicon limited current） 120 A VDMOSFETs, is obtained by the self-aligned planar PD(TC=25℃) 230 W Technology which reduce the conduction loss, improve RDS(ON)Typ 7.6 mΩ switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤8.