GENERAL DESCRIPTION
： VDSS 55 V CS3205 B8, the silicon N-channel Enhanced ID（Silicon limited current） 120 A VDMOSFETs, is obtained by the self-aligned planar PD(TC=25℃) 230 W Technology which reduce the conduction loss, improve RDS(ON)Typ 7.6 mΩ switching performance and enhance the avalanche energy. FEATURES
： l Fast Switching l Low ON Resistance(Rdson≤8.5mΩ) l Low Gate Charge (Typical Data:74nC) l Low Reverse transfer capacitances(Typical:68pF) l 100% Single Pulse avalanche energy Test APPLICATIONS
： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Rating 55 120 84 390 ±20 1200 5.0 230 1.53 150，–55 to 150 300 Units V A A A V mJ V/ns W W/℃ ℃ ℃ WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD.
Huajing Microelectronics
