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CS4145A8H - Silicon N-Channel Power MOSFET

General Description

switching performance and enhance the avalanche energy.

Key Features

  • l TrenchFET Power MOSFET l Low ON Resistance(Rdson≤10mΩ) l Low Gate Charge (Typical Data:82nC) l Low Reverse transfer capacitances(Typical:260pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS4145A8H
Manufacturer Huajing Microelectronics
File Size 349.54 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS4145A8H Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Huajing Discrete Devices Silicon N-Channel Power MOSFET ○R CS4145 A8H General Description： CS4145 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 60 84 200 8.5 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l TrenchFET Power MOSFET l Low ON Resistance(Rdson≤10mΩ) l Low Gate Charge (Typical Data:82nC) l Low Reverse transfer capacitances(Typical:260pF) l 100% Single Pulse avalanche energy Test Applications： UPS,DC Motor Control and Class D Amplifier.