CS5N90ARH-G - Silicon N-Channel Power MOSFET

Huajing Microelectronics

General Description

performance and enhance the avalanche energy.

Key Features

l Fast Switching l Low ON Resistance(Rdson≤2.5Ω ) l Low Gate Charge (Typical Data:31nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test.

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CS5N90ARH-G silicon n-channel power mosfet by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	CS5N90ARH-G
Manufacturer	Huajing Microelectronics
File Size	611.49 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS5N90ARH-G Datasheet

Full PDF Text Transcription for CS5N90ARH-G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS5N90ARH-G. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS5N90 ARH-G ○R General Description： CS5N90 ARH-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technol...

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nel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-262, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤2.5Ω ) l Low Gate Charge (Typical Data:31nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.

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